Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications-Reference-Cited by-同舟云学术

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Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications

Published:2024 Issue: Volume:12 Page:10988-10994
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

You Hyunseo¹^ORCID,Nam Kihoon¹^ORCID,An Jehyun¹^ORCID,Park Chanyang¹^ORCID,Kim Donghyun¹^ORCID,Lee Seonhaeng²,Lee Namhyun²,Baek Rock-Hyun¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea

2. Memory Division, Quality Assurance Team, Samsung Electronics Company Ltd., Hwaseong-si, Republic of Korea

Funder

Semiconductor Industry Collaborative Project between the Pohang University of Science and Technology

Samsung

Ministry of Trade, Industry, and Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10398173.pdf?arnumber=10398173

Reference25 articles.

1. Cryo-CMOS for quantum computing

2. Cryogenic-DRAM based memory system for scalable quantum computers

3. Cryogenic memory technologies

4. Cryogenic MOS Transistor Model

5. Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

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