Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs
Author:
Affiliation:
1. School of Electrical Engineering, Nantong University, Nantong, China
2. School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China
Funder
Natural Science Foundation of Jiangsu Province
National Natural Science Foundation of China
Natural Science Foundation of the Jiangsu Higher Education Institutions of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/9668973/09931010.pdf?arnumber=9931010
Reference31 articles.
1. Gate-Source Voltage Analysis for Switching Crosstalk Evaluation in SiC MOSFETs Half-Bridge Converters
2. Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors
3. A Detailed Analytical Model of SiC MOSFETs for Bridge-Leg Configuration by Considering Staged Critical Parameters
4. Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules
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2. Investigation of the limit conditions of SiC MOSFET body diode reverse recovery;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
3. Parasitic Capacitive Couplings in Medium Voltage Power Electronic Systems: An Overview;IEEE Transactions on Power Electronics;2023-08
4. Analytical models of the crosstalk voltage in SiC MOSFETs under different loads;IET Power Electronics;2023-07-16
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