Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories-Reference-Cited by-同舟云学术

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Published:2022 Issue: Volume:10 Page:114566-114585
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Korkian Golnaz¹^ORCID,Leon Daniel²^ORCID,Franco Francisco J.³^ORCID,Fabero Juan C.¹^ORCID,Letiche Manon⁴^ORCID,Morilla Yolanda⁵^ORCID,Martin-Holgado Pedro⁵^ORCID,Puchner Helmut⁶^ORCID,Mecha Hortensia¹^ORCID,Clemente Juan A.¹^ORCID

Affiliation:

1. Computer Architecture Department, Facultad de Informática, Universidad Complutense de Madrid (UCM), Madrid, Spain

2. Higher Polytechnic School, Universidad Francisco de Vitoria, Madrid, Spain

3. Department of Structure of Matter, Thermal Physics, and Electronics, Facultad de Ciencias Físicas, Universidad Complutense de Madrid (UCM), Madrid, Spain

4. Institut Laue-Langevin (ILL), Grenoble, France

5. Centro Nacional de Aceleradores, Universidad de Sevilla, Seville, Spain

6. Infineon Technologies, Memory Solutions, and Aerospace & Defense, San Jose, CA, USA

Funder

Spanish MICINN projects

European Union’s Horizon 2020 Research and Innovation Program

French government program "Programme d'Investissements d'Avenir (PIA)"

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09931015.pdf?arnumber=9931015

Reference77 articles.

1. SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

2. The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

3. Failure Analysis of Commercial Ferroelectric Random Access Memory for Single Event Effect

4. Destructive single-event effects in semiconductor devices and ICs

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3. Neutron Induced Single Event Testing of Commercial Ferroelectric Memory Device (FRAM);2023 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2023 NSREC);2023-07

4. Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24

5. Critical Charge Dependency of Single Event Upset (SEU) on the Supply Voltage in Nanometric CMOS SRAMs;2022 Iranian International Conference on Microelectronics (IICM);2022-12-20