Compact and Broadband ESD Protection I/O Pad Using Pad-Stacked Inductor-Reference-Cited by-同舟云学术

Compact and Broadband ESD Protection I/O Pad Using Pad-Stacked Inductor

Published:2023 Issue: Volume:11 Page:11422-11429
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Jeong Jaehoon¹,Kim Hyungeun¹,Park Jaehyun²,Shin Jongshin²^ORCID,Jeong Jinho¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Sogang University, Seoul, South Korea

2. Foundry Division, Samsung Electronics, Hwaseong, South Korea

Funder

Samsung Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10021582.pdf?arnumber=10021582

Reference30 articles.

1. Overview on ESD Protection Designs of Low-Parasitic Capacitance for RF ICs in CMOS Technologies

2. $\pi$ -SCR Device for Broadband ESD Protection in Low-Voltage CMOS Technology

3. Analysis and optimization of distributed ESD protection circuits for high-speed mixed-signal and RF applications;ito;Proc Electr Overstress/Electrostatic Discharge Symp,2001

4. A 224-Gb/s DAC-Based PAM-4 Quarter-Rate Transmitter With 8-Tap FFE in 10-nm FinFET

5. A compact broadband ESD protection circuit using multi‐layer helical inductor

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