Influence of Hole Current Crowding on Snapback Breakdown in Multi-Finger MOSFETs-Reference-Cited by-同舟云学术

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Influence of Hole Current Crowding on Snapback Breakdown in Multi-Finger MOSFETs

Published:2023 Issue: Volume:11 Page:60758-60762
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Lee Siyoun¹^ORCID,Kim Seong-Yeon²,Oh Haesoon²,Sim Jaesung²,Choi Woo Young³^ORCID

Affiliation:

1. Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea

2. Department of NAND Development, SK Hynix Inc., Cheongju, Republic of Korea

3. Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, Republic of Korea

Funder

SK Hynix Inc.

National Research Foundation (NRF) of South Korea funded by the Ministry of Science and ICT (MSIT)

NRF of South Korea funded by the MSIT (Processing-in-memory

NRF of South Korea funded by the MSIT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10149319.pdf?arnumber=10149319

Reference14 articles.

1. High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

2. Electrothermal behavior of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions

3. Optimization and realization of sub-100-nm channel length single halo p-MOSFETs

4. short-channel mos transistors in the avalanche-multiplication regime;muller;IEEE Transactions on Electron Devices,1982

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