A 0.78–0.91–THz Wideband Frequency Tripler With Harmonic-Matched Bias Network
Author:
Affiliation:
1. Samsung Research, Seoul, South Korea
2. School of Electrical Engineering, Korea University, Seoul, South Korea
3. Samsung Electronics, Hwaseong, South Korea
Funder
Ministry of Science and ICT (MSIT), South Korea
Institute for Information and Communications Technology Planning and Evaluation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/10005208/10073534.pdf?arnumber=10073534
Reference14 articles.
1. A 820 GHz SiGe chipset for terahertz active imaging applications;grzyb;Proc IEEE Int Solid-State Circuits Conf,2011
2. A 0.92-THz SiGe Power Radiator Based on a Nonlinear Theory for Harmonic Generation
3. InP HBT Technologies for THz Integrated Circuits
4. WR-1.5 High-Power Frequency Doubler in 130-nm InP HBT Technology
5. A high efficiency 670 GHz ×36InP HEMT multiplier chain;zamora;IEEE MTT-S Int Microw Symp Dig,2017
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