Reduction of hole transit time in GaAs MSM photodetectors by p-type /spl delta/-doping-Reference-Cited by-同舟云学术

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Reduction of hole transit time in GaAs MSM photodetectors by p-type /spl delta/-doping

Published:1996-11 Issue:11 Volume:8 Page:1525-1527
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Jen-Inn Chyi ,Yi-Jiunn Chien ,Rong-Heng Yuang ,Jia-Lin Shieh ,Jen-Wei Pan ,Jyh-Shin Chen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/68/11690/00541571.pdf?arnumber=541571

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD’s Performance;IEEE Access;2019

2. Photodetectors;Reference Module in Materials Science and Materials Engineering;2016

3. High speed photodetectors based on a two-dimensional electron/hole gas heterostructure;Applied Physics Letters;2013-04-22

4. Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors;Applied Physics Letters;2011-06-13

5. High-Speed Photodetectors and Photoreceivers;High-Speed Photonic Devices;2006-09-29

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