Surge Voltage Suppression Using Power Device Embedded Module for Half-bridge DC-DC Converter
Author:
Affiliation:
1. Nagasaki Institute of Applied Science,Nagasaki,Japan
2. Fukuoka University,Fukuoka,Japan
3. Isahaya Electronics Corporation,Nagasaki,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10169137/10169142/10171077.pdf?arnumber=10171077
Reference22 articles.
1. Electrical Performance Advancement in SiC Power Module Package Design With Kelvin Drain Connection and Low Parasitic Inductance
2. Half-bridge Power Device Embedded Module with Low Parasitic Inductance
3. A 1200-V 60-A SiC MOSFET multichip phase-leg module for high-temperature high-frequency applications;zheng;IEEE Trans Power Electron,2014
4. Design of a low parasitic inductance SiC power module with double-sided cooling
5. Ultra low inductance power module for fast switching SiC power devices
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