A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices: a solar cell application
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/5841/00223704.pdf?arnumber=223704
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An Enhanced Conversion Efficiency of Metal Insulator Semiconductor Solar Cells by Using Different High-K Dielectrics;Silicon;2021-03-02
2. Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor;IEEE Transactions on Electron Devices;2019-01
3. The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures;IEEE Transactions on Electron Devices;2018-10
4. Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices;Journal of Physics D: Applied Physics;2018-07-19
5. Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure With Concentric Circular Electrodes Controlled by Designed Substrate Bias;IEEE Transactions on Electron Devices;2017-12
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