5V-Bias Cmos-Mems Capacitive Resonator with RM< 5KΩ Based On Metal-Insulator-Metal (Mim) Capacitor
Author:
Affiliation:
1. National Tsing Hua University,Institute of NanoEngineering and MicroSystems,Hsinchu,Taiwan
2. National Tsing Hua University,Department of Power Mechanical Engineering,Hsinchu,Taiwan
Funder
TSMC, Hsinchu, Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9698823/9699435/09699766.pdf?arnumber=9699766
Reference4 articles.
1. A Low Impedance CMOS-MEMS Capacitive Resonator Based on Metal-Insulator-Metal (MIM) Capacitor Structure
2. A CMOS–MEMS arrayed resonant-gate field effect transistor (RGFET) oscillator
3. Advanced CMOS–MEMS Resonator Platform
4. A CMOS-Integrated MEMS Platform for Frequency Stable Resonators—Part II: Design and Analysis
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2. Nanoelectromechanical resonators for gigahertz frequency control based on hafnia–zirconia–alumina superlattices;Nature Electronics;2023-07-27
3. Tiny-Gap Titanium-Nitride-Composite MEMS Resonator Designs With High Power Handling Capability;Journal of Microelectromechanical Systems;2023-04
4. CMOS-MEMS Oscillator Architecture and Phase Noise: A Mini-Review;Frontiers in Mechanical Engineering;2022-05-03
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