A Ka-Band Bi-Directional Reconfigurable Switched Beam-Forming Network Based on 4 × 4 Butler Matrix in 28-nm CMOS
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
2. System LSI Business Division, Samsung Electronics Company Ltd., Hwaseong, South Korea
Funder
Institute of Information and Communication Technology Planning and Evaluation (IITP) Grant funded by the Korean Government
Samsung Electronics Company, Ltd
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/10144346/10019775.pdf?arnumber=10019775
Reference18 articles.
1. Design of 2.4-GHz CMOS reconfigurable dual-function switch network and its application on array beamforming
2. A 28-GHz Reconfigurable SP4T Switch Network for a Switched Beam System in 65-nm CMOS
3. Ka-Band CMOS Absorptive SP4T Switch With One-Third Miniaturization
4. A 28-GHz Butler Matrix Based Switched Beam-Forming Network with Phase Inverting Switch for Dual-Port Excitation in 28-nm CMOS
5. Theory Analysis and Realization of Single-/Dual-Port Excitation in Beam-Forming Network
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