Behavioral Model for RF Power Transistors Based on Canonical Section-Wise Piecewise Linear Functions

Author:

Cai JialinORCID,Liu Jun,Su JiangtaoORCID,Sun LinglingORCID,Chen ShichangORCID,Xia JingORCID,King Justin B.ORCID

Funder

National Natural Science Foundation of China

Key Lab Foundation of Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

Natural Science Foundation of Zhejiang Province

Key Research & Development Plan of Jiangsu Province

State Key Laboratory of Millimeter Waves

Foundation of the Key Laboratory of RF Circuit and System, Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Modeling of TVS Diode Harmonic Distortion Using Piecewise Linear Capacitance;IEEE Transactions on Microwave Theory and Techniques;2024-09

2. DC‐bias and temperature included CSWPL model for RF power transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-03

3. Incorporating DC bias voltage in poly‐harmonic distortion modeling for RF power GaN transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-01-11

4. Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges;Micromachines;2023-12-25

5. Cardiff Behavioral Model from Passive Load-Pull while Enforcing S-Parameters;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

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