220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technology Achieving 240-Gbps Dual-Band Data Transmission
Author:
Affiliation:
1. NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/10388387/10308416.pdf?arnumber=10308416
Reference15 articles.
1. IEEE 802.15.3d: First Standardization Efforts for Sub-Terahertz Band Communications toward 6G
2. 300-GHz. 100-Gb/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer
3. 300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers
4. 50-Gb/s Direct Conversion QPSK Modulator and Demodulator MMICs for Terahertz Communications at 300 GHz
5. A 16-QAM 100-Gb/s 1-M Wireless Link With an EVM of 17% at 230 GHz in an SiGe Technology
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