High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring-Reference-Cited by-同舟云学术

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Published:2023-02 Issue:2 Volume:71 Page:898-906
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Liu Tao¹^ORCID,Li Yang²^ORCID,Yang Jia-Yi³^ORCID,Wang Ting-Ting¹,Wang Xiao²^ORCID,Yang Lin-An¹^ORCID,Dickey Michael⁴^ORCID,Ao Jin-Ping¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. Department of Electronic Engineering, Engineering Research Center of Internet of Things Technology Applications, Ministry of Education, Jiangnan University, Wuxi, China

3. College of Computer Science and Technology, Xi’an University of Science and Technology, Xi’an, China

4. Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, NC, USA

Funder

National Natural Science Foundation for Young Scholars of China

Postdoctoral Science Foundation of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/10040254/09861264.pdf?arnumber=9861264

Reference35 articles.

1. Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

2. LC Wireless Sensitive Pressure Sensors With Microstructured PDMS Dielectric Layers for Wound Monitoring

3. Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

4. Remotely Powered Piezoresistive Pressure Sensor: Toward Wireless Monitoring of Intracranial Pressure

5. Co-design of GaN based Schottky Barrier Diode and Rectification Sensor with High Efficiency and Sensitivity

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Efficiency and High-Power Rectifiers Using Cost-Effective AlGaN/GaN Schottky Diode With Accurate Large-Signal Parameter Extraction;IEEE Microwave and Wireless Technology Letters;2024-05

2. A Transistor-Based High-Efficiency Rectifier Using Input Second Harmonic Component;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01

3. Biased-FSK Modulation for Simultaneous Wireless Information and Power Transfer;IEEE Transactions on Microwave Theory and Techniques;2024

4. Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification;IEEE Transactions on Microwave Theory and Techniques;2024

5. A C-Band High Conversion Efficiency Rectifying Circuit with High Output Power;2023 IEEE 11th International Conference on Information, Communication and Networks (ICICN);2023-08-17