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A Fully Integrated 3.5-/4.9-GHz Dual-Band GaN MMIC Doherty Power Amplifier Based on Multi-Resonant Circuits

  • Published:2022-01 Issue:1 Volume:70 Page:416-431
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Lv GuanshengORCID,Chen WenhuaORCID,Chen XiaofanORCID,Wan Shun,Ghannouchi Fadhel M.ORCID,Feng ZhengheORCID

Funder

National Key Research and Development Program of China

NSFC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of Fully Integrated GaN Dual-Band Doherty Power Amplifier for 5G Wireless Communication;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20

2. A 1.8–5.4-GHz GaN MMIC Distributed Efficient Power Amplifier With Reactance Compensation and Adaptive Biasing;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-04

3. A 4.9–7.1-GHz High-Efficiency Post-Matching GaN Front-End Module for Wi-Fi 7 Application;IEEE Journal of Solid-State Circuits;2024-02

4. Simplified All-in-One Load Network of the Broadband Doherty Power Amplifier;IEEE Transactions on Microwave Theory and Techniques;2024

5. A Multimode GaN Doherty Power Amplifier MMIC With N-Scalable Amplifiers for Selective Back-Off Power Level;IEEE Transactions on Microwave Theory and Techniques;2024-01
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