Dual-Band Three-Way Doherty Power Amplifier Employing Dual-Mode Gate Bias and Load Compensation Network-Reference-Cited by-同舟云学术

Dual-Band Three-Way Doherty Power Amplifier Employing Dual-Mode Gate Bias and Load Compensation Network

Author:

Gao Ruibin¹^ORCID,Pang Jingzhou¹^ORCID,Cai Tianfu¹^ORCID,Shen Ce²^ORCID,Shi Weimin¹,Dai Zhijiang¹,Li Mingyu¹^ORCID,Zhu Anding³^ORCID

Affiliation:

1. School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China

2. School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China

3. School of Electrical and Electronic Engineering, University College Dublin, Dublin 4, Ireland

Funder

National Natural Science Foundation of China

Natural Science Foundation of Chongqing

Science Foundation Ireland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

Reference40 articles.

4. A dual-mode bias circuit enabled GaN Doherty amplifier operating in 0.85–2.05 GHz and 2.4–4.2 GHz;komatsuzaki;IEEE MTT-S Int Microw Symp Dig,2020

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