A SiGe Power Amplifier With Double Gain Peaks Based on the Control of Stationary Points of Impedance Transformation
Author:
Affiliation:
1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/9394815/09372877.pdf?arnumber=9372877
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3. Knowledge-Aided Automated Synthesis for Broadband Power Amplifier With Transformer-Coupled Resonators;IEEE Transactions on Circuits and Systems I: Regular Papers;2024
4. A Ka-Band SiGe High-Gain Power Amplifier With Stability–Efficiency–Reliability-Enhanced Serial–Parallel Current-Reuse Technique;IEEE Transactions on Microwave Theory and Techniques;2024
5. A 23-41GHz Ultra-Wideband Linear CMOS Power Amplifier for 5G Communication;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
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