A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

Published:2022-10 Issue:10 Volume:70 Page:4436-4448
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Roev Artem¹^ORCID,Qureshi Jawad²,Geurts Marcel²^ORCID,Maaskant Rob¹^ORCID,Matters-Kammerer Marion K.³,Ivashina Marianna¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Chalmers University of Technology, Gothenburg, Sweden

2. NXP Semiconductors, Nijmegen, The Netherlands

3. Department of Electrical Engineering, Eindhoven University of Technology (TU/e), Eindhoven, The Netherlands

Funder

European Union’s Horizon 2020 Research and Innovation Program under the Marie Skłodowska Curie Grant Agreement

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/9911796/09872119.pdf?arnumber=9872119

Reference33 articles.

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2. 4.9 A 60GHz CMOS power amplifier with cascaded asymmetric distributed-active-transformer achieving watt-level peak output power with 20.8% PAE and supporting 2Gsym/s 64-QAM modulation;nguyen;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2019

3. Watt-Level mm-Wave Power Amplification With Dynamic Load Modulation in a SiGe HBT Digital Power Amplifier

4. A Wideband 20 to 28 GHz Signal Generator MMIC With 30.8 dBm Output Power Based on a Power Amplifier Cell With 31% PAE in SiGe

5. A 19-43 GHz Linear Power Amplifier in 28nm Bulk CMOS for 5G Phased Array

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