A 28/38 GHz Dual-Band Power Amplifier for 5G Communication
Author:
Affiliation:
1. Department of Electrical Engineering, Eindhoven University of Technology, MB Eindhoven, The Netherlands
Funder
NXP Semiconductors
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/9880609/09676485.pdf?arnumber=9676485
Reference35 articles.
1. 4.8 A Highly Linear Super-Resolution Mixed-Signal Doherty Power Amplifier for High-Efficiency mm-Wave 5G Multi-Gb/s Communications
2. A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process
3. A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE
4. A 1.9 GHz CMOS Power Amplifier With Embedded Linearizer to Compensate AM-PM Distortion
5. Design of a Ka-Band Cascode Power Amplifier Linearized With Cold-FET Interstage Matching Network
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