4kW GaN-Based 0.1-10 MHz RF Class-D Inverter
Author:
Affiliation:
1. UCLA,Basic Plasma Science Facility,Los Angeles,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10613862/10613936/10613977.pdf?arnumber=10613977
Reference6 articles.
1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
2. A Tri-Slope Gate Driving GaN DC–DC Converter With Spurious Noise Compression and Ringing Suppression for Automotive Applications
3. A 10-MHz Closed-Loop EMI-Regulated GaN Switching Power Converter Using Emulated Miller Plateau Tracking and Adaptive Strength Gate Driving
4. Operation of Transformerless Inverters, Parallel Connected, with Modified SPWM And SVM“, Masters degree thesis;Nardone;PolitecnicodiMilano,2018
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