Broad Range (254–302 nm) and High Performance Ga<sub>2</sub>O<sub>3</sub>:SnO<sub>2</sub> Based Deep UV Photodetector-Reference-Cited by-同舟云学术

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Broad Range (254–302 nm) and High Performance Ga₂O₃:SnO₂ Based Deep UV Photodetector

Published:2022 Issue: Volume:21 Page:320-327
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Mondal Arnab¹^ORCID,Nandi Santu²^ORCID,Yadav Manoj K¹^ORCID,Nandi Arpit¹^ORCID,Bag Ankush³^ORCID

Affiliation:

1. School of Computing and Electrical Engineering, Indian Institute of Technology Mandi, Mandi, India

2. School of Basic Science, Indian Institute of Technology Mandi, Mandi, India

3. Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati, India

Funder

SERB, Govt. of India

Council of Scientific and Industrial Research, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/9682520/09807436.pdf?arnumber=9807436

Reference50 articles.

1. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

2. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

3. Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

4. Preparation and characterization of SnO2 nanoparticles by hydrothermal route

5. Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction

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1. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

2. Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics;Applied Physics Letters;2024-07-08

3. Sn-doped β-Ga₂O₃ thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source;Physica Scripta;2024-05-30

4. Unveiling structural and optical properties of Sn-doped β-Ga2O3: A correlation of experimental and theoretical observations;Materials Science and Engineering: B;2024-04

5. Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications;Advanced Electronic Materials;2024-01-17

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