Improved Capacitive Memory in Glancing Angle Electron-Beam Synthesized Isotropic Bilayer n-TiO2/In2O3 Nanowires Array
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/10016255/10039492.pdf?arnumber=10039492
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1. Presence of capacitive memory in GLAD-synthesized WO3 nanowire
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4. Electroforming and endurance behavior of Al/Pr0.7Ca0.3MnO3/Pt devices
5. Designing nanostructures by glancing angle deposition
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