Fabrication and Characterization of TiO x Memristor for Synaptic Device Application-Reference-Cited by-同舟云学术

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Fabrication and Characterization of TiO x Memristor for Synaptic Device Application

Published:2020 Issue: Volume:19 Page:475-480
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Kim Tae-Hyeon^ORCID,Kim Min-Hwi^ORCID,Bang Suhyun^ORCID,Lee Dong Keun^ORCID,Kim Sungjun^ORCID,Cho Seongjae^ORCID,Park Byung-Gook^ORCID

Funder

National Research Foundation of Korea

Koran Ministry of Science and ICT

Brain Korea 21 Plus Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/8933521/09103975.pdf?arnumber=9103975

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1. Review of memristor based neuromorphic computation: opportunities, challenges and applications;Engineering Research Express;2024-08-07

2. Self-aware Hierarchical Neuromorphic Architecture;2024 International Joint Conference on Neural Networks (IJCNN);2024-06-30

3. The elastic, electronic, and optical properties of TinO2n1: Studying of GGA(LDA)+U;Materials Today Communications;2024-06

4. Memristor Crossbar Array with Enhanced Device Yield for In-Memory Vector–Matrix Multiplication;ACS Applied Electronic Materials;2024-05-30

5. Short-term memory characteristics of TiN/WOX/FTO-based transparent memory device;Chinese Journal of Physics;2024-04

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