Hybrid silicon nanocrystal silicon nitride dynamic random access memory-Reference-Cited by-同舟云学术

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Hybrid silicon nanocrystal silicon nitride dynamic random access memory

Published:2003-12 Issue:4 Volume:2 Page:335-340
ISSN:1536-125X
Container-title:IEEE Transactions On Nanotechnology
language:en
Short-container-title:IEEE Trans. Nanotechnology

Author:

Steimle R.F.,Sadd M.,Muralidhar R.,Rajesh Rao ,Hradsky B.,Straub S.,White B.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/28291/01264891.pdf?arnumber=1264891

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review;Facta universitatis - series: Electronics and Energetics;2020

2. Better band gaps for wide-gap semiconductors from a locally corrected exchange-correlation potential that nearly eliminates self-interaction errors;Journal of Physics: Condensed Matter;2017-09-08

3. Fabrication and characterisation of Al gate n ‐metal–oxide–semiconductor field‐effect transistor, on‐chip fabricated with silicon nitride ion‐sensitive field‐effect transistor;IET Computers & Digital Techniques;2016-09

4. Chapter 12 Silicon Nanocrystal Memories;Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed;2016-08-08

5. Characteristics of Schottky barrier silicon nanocluster floating gate flash memory;Thin Solid Films;2011-07

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