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Exploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications

  • Published:2021 Issue: Volume:20 Page:123-128
  • ISSN:1536-125X
  • Container-title:IEEE Transactions on Nanotechnology
  • language:
  • Short-container-title:IEEE Trans. Nanotechnology

Author:

Garzon EstebanORCID,De Rose RaffaeleORCID,Crupi FeliceORCID,Teman AdamORCID,Lanuzza MarcoORCID

Funder

Israel Innovation Authority

Israel Science Foundation

Italian Space Agency

Council for Higher Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Voltage-Divider-Based Binary and Ternary Content-Addressable Memory (CAM) Exploiting Double-Barrier Magnetic Tunnel Junction;2023 IEEE Seventh Ecuador Technical Chapters Meeting (ECTM);2023-10-10

2. Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories;Proceedings of the National Academy of Sciences, India Section A: Physical Sciences;2023-06-04

3. MRAM-Based Cache System Design and Policy Optimization for RISC-V Multi-Core CPUs;IEEE Transactions on Magnetics;2023-06

4. Is the Future Cold or Tall? Design Space Exploration of Cryogenic and 3D Embedded Cache Memory;2023 IEEE International Symposium on Performance Analysis of Systems and Software (ISPASS);2023-04

5. Performance Benchmarking of FinFET- and TFET-Based STT-MRAM Bitcells Operating at Ultra-Low Voltages;2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS);2023-02-27
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