MOS-Junction-Based Nanostructures by Thermal Oxidation of Silicon Wires for Hydrogen Detection-Reference-Cited by-同舟云学术

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MOS-Junction-Based Nanostructures by Thermal Oxidation of Silicon Wires for Hydrogen Detection

Published:2004-06 Issue:2 Volume:3 Page:287-292
ISSN:1536-125X
Container-title:IEEE Transactions On Nanotechnology
language:en
Short-container-title:IEEE Trans. Nanotechnology

Author:

Tibuzzi A.,Margesin B.,Decarli M.,DiNatale C.,Zen M.,D'Amico A.,Soncini G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/28953/01303524.pdf?arnumber=1303524

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Fast Response and Recovery Pd Nanoparticles and Ni Thin Film Hydrogen Gas Sensors Based on Metal-Oxide-Semiconductor Structure;Nano;2017-08

2. Highly sensitive work function hydrogen gas sensor based on PdNPs/SiO2/Si structure at room temperature;Results in Physics;2017

3. Si Nanowire-Based Humidity Sensors Prepared on Glass Substrate;IEEE Sensors Journal;2011-11

4. 22nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etching;Microelectronic Engineering;2010-05

5. Hydrogen sensors based on Ni/SiO2/Si MOS capacitors;Sensors and Actuators B: Chemical;2007-03-26

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