MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing-Reference-Cited by-同舟云学术

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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

Published:2012-05 Issue:3 Volume:11 Page:483-491
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Wu Yung-Hsien,Chen Lun-Lun,Lyu Rong-Jhe,Wu Jia-Rong,Wu Min-Lin,Lin Chia-Chun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/6195043/06096419.pdf?arnumber=6096419

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric and electrical performance of poly (o-toluidine) based MOS devices;Physica B: Condensed Matter;2021-10

2. Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics;Microelectronics Reliability;2017-08

3. High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics;Journal of Computational Electronics;2016-11-08

4. Structural and electrical characterizations of BiFeO3 capacitors deposited by sol–gel dip coating technique;Thin Solid Films;2015-09

5. Study of Interface Charge Densities for ZrO2and HfO2Based Metal-Oxide-Semiconductor Devices;Advances in Materials Science and Engineering;2014

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