Combination of Mass Metrology with Scatterometry to obtain bottom Width of deep Trenches : AM: Advanced Metrology
Author:
Affiliation:
1. Infineon Technologies,Dresden,Germany
2. Infineon Technologies Austria AG,Villach,Austria
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9792471/9792473/09792504.pdf?arnumber=9792504
Reference4 articles.
1. Ultra large pitch and depth structures metrology using spectral reflectometry in combination with RCWAbased model and TLM Algorithm;osherov;IEEE Proceedings Advanced Semiconductor Manufacturing Conference 2020,0
2. Mass Metrology for controlling and understanding processes
3. Scatterometry for Semiconductor Metrology
4. Poly recess depth in two different trench MOSFETs measured with scatterometry;heider;IEEE Proceedings Advanced Semiconductor Manufacturing Conference 2016,0
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Non-destructive measurement of bottom width in deep trench isolation structures using IRCD metrology;Metrology, Inspection, and Process Control XXXVIII;2024-04-10
2. Machine Learning for Deep Trench Bottom Width Measurements using Scatterometry : AM: Advanced Metrology;2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2023-05-01
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