Profile design considerations for minimizing base transit time in SiGe HBT's-Reference-Cited by-同舟云学术

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Profile design considerations for minimizing base transit time in SiGe HBT's

Published:1998 Issue:8 Volume:45 Page:1725-1731
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Patri V.S.,Kumar M.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/15219/00704371.pdf?arnumber=704371

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses;Microelectronics Reliability;2020-02

2. Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs;Superlattices and Microstructures;2017-11

3. Effect of doping and stoichiometric profile on transport in SiGe heterojunction bipolar transistor;Journal of Physics D: Applied Physics;2016-07-28

4. A Silicon Biristor With Reduced Operating Voltage: Proposal and Analysis;IEEE Journal of the Electron Devices Society;2015-03

5. A novel approach for justification of box-triangular germanium profile in SiGe HBTs;Journal of Semiconductors;2015-02

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