Gate Diode Current Sensing for Device Temperature Estimation in GaN RF Power Amplifiers-Reference-Cited by-同舟云学术

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Gate Diode Current Sensing for Device Temperature Estimation in GaN RF Power Amplifiers

Published:2022-01-16 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
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Author:

Jindal Gautam¹,Watkins Gavin T.²,Morris Kevin¹,Cappello Tommaso¹

Affiliation:

1. University of Bristol,CSN Lab

2. Toshiba Research Europe,Bristol

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9719587/9719681/09719738.pdf?arnumber=9719738

Reference5 articles.

1. Gaussian Pulse Characterization of RF Power Amplifiers

2. An RF Power Amplifier Behavioural Model with Low-Complexity Temperature Feedback for Transmitter Arrays

3. Exact analytical solution for current flow through diode with series resistance

4. Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

5. Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Sub-Nanosecond Gate Bias-Switching Circuit for GaN RF Power Amplifiers;IEEE Microwave and Wireless Technology Letters;2024-02

2. Synthesis of the Calibration Algorithm of the Microwave Signal Power Meter;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

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