An improved SiC MOSFET-gate driver integrated power module with ultra low stray inductances-Reference-Cited by-同舟云学术

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An improved SiC MOSFET-gate driver integrated power module with ultra low stray inductances

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Zhang Liqi,Liu Pengkun,Huang Alex Q.,Guo Suxuan,Yu Ruiyang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8125522/8170483/08170570.pdf?arnumber=8170570

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extreme high efficiency enabled by silicon carbide (SiC) power devices;Materials Science in Semiconductor Processing;2024-03

2. 5-MHz Operation of a DC 565-V SiC-MOSFET Half-Bridge Inverter by Reducing Thermal Resistance of General-Purpose Gate Drivers;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. A High Power Density Gate Driver Integrated SiC Multichip Power Module with Lower Parasitic Inductance;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

4. Driver-Integrated Silicon Carbide Based Power Module with Self-Optimized Current-Sensorless Temperature-Driven Deadtime Control;IECON 2023- 49th Annual Conference of the IEEE Industrial Electronics Society;2023-10-16

5. Busbar Study Regarding Stray Inductance of a 50kW 600V Three-Phase Static Inverter for Railway Applications;2023 10th International Conference on Information Technology, Computer, and Electrical Engineering (ICITACEE);2023-08-31

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