Design optimization of GaN vertical power diodes and comparison to Si and SiC-Reference-Cited by-同舟云学术

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Design optimization of GaN vertical power diodes and comparison to Si and SiC

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Flicker Jack,Kaplar Robert

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8125522/8170483/08170498.pdf?arnumber=8170498

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on High-Speed Switching Characteristics and Parasitic Parameter Optimization of Enhancement-Mode GaN Devices;2024 10th International Conference on Power Electronics Systems and Applications (PESA);2024-06-05

2. Improving vertical GaN p–n diode performance with room temperature defect mitigation;Semiconductor Science and Technology;2023-12-07

3. Co-optimization Design and Analysis of WBG and UWBG Power Diodes with Operational Regimes;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

4. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices;Micromachines;2023-10-31

5. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-08

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