Parasitic Capacitors' Impact on Switching Performance in a 10 kV SiC MOSFET Based Converter
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8554989/8569038/08569080.pdf?arnumber=8569080
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution;IEEE Transactions on Power Electronics;2024-08
2. Discovery of Loss Imbalance in SiC Half-Bridge Power Modules – Analysis and Validations;IEEE Transactions on Power Electronics;2024-05
3. Thermal Management System;Design of Three‐Phase AC Power Electronics Converters;2023-11-03
4. Parasitic Capacitive Couplings in Medium Voltage Power Electronic Systems: An Overview;IEEE Transactions on Power Electronics;2023-08
5. Loss Imbalance in SiC Half-Bridge Power Module;2023 IEEE 6th International Electrical and Energy Conference (CIEEC);2023-05-12
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