A D-Band Reflective-Type Phase Shifter Using a SiGe PIN Diode Resonant Load
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9913288/09780076.pdf?arnumber=9780076
Reference8 articles.
1. D-Band 360° Phase Shifter with Uniform Insertion Loss
2. An Eight-Element 140-GHz Wafer-Scale IF Beamforming Phased-Array Receiver With 64-QAM Operation in CMOS RFSOI
3. Geometric Analysis and Systematic Design of a Reflective-Type Phase Shifter With Full 360° Phase Shift Range and Minimal Loss Variation
4. Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns
5. A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
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