A 76.5–92.6 GHz CMOS LNA Using Two-Port kQ-Product Theory for Transformer Design
Author:
Affiliation:
1. School of Cyber Science and Engineering, School of Microelectronics, Southeast University, Nanjing, China
2. School of Information Science and Engineering, Southeast University, Nanjing, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9913288/09769764.pdf?arnumber=9769764
Reference9 articles.
1. What in the World Is Q? [[Distinguished Microwave Lecture}
2. Wireless Power Transfer via Strongly Coupled Magnetic Resonances
3. An 88.5–110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications
4. The kQ Product as Viewed by an Analog Circuit Engineer
5. Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI
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1. A 58–110 GHz 4.2 dB Minimum NF CMOS LNA With Broadband Simultaneous Noise and Impedance Matching;IEEE Microwave and Wireless Technology Letters;2024-05
2. A Low-Power Low-Noise W-band LNA in 90-nm CMOS Process With Source Degeneration Technique;IEEE Microwave and Wireless Technology Letters;2024-01
3. A 76-107-GHz Low-Noise Amplifier with 17-dB Gain and 6.3-dB NF in 40-nm CMOS;2023 IEEE 11th Asia-Pacific Conference on Antennas and Propagation (APCAP);2023-11-22
4. Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-08
5. A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
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