A Low-Noise W-Band Receiver in a 28-nm CMOS Technology
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/4357983/09616420.pdf?arnumber=9616420
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 5.6 dB Noise-Figure X-Band to W-Band CMOS Frequency-Extender Receiver Frontend;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. A 1.5 mW, 28 GHz Noise-Cancelling LNA in 65-nm CMOS;2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS);2023-08-06
3. A Compact Low-Power 28-nm FD-SOI CMOS 76–81 GHz Dual-Path Receiver With Phase Control for Automotive Applications;IEEE Transactions on Microwave Theory and Techniques;2023
4. A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor;International Journal of Circuit Theory and Applications;2022-11-22
5. A 156 GHz high-power doubler-embedded cross-coupled local oscillator in 55 nm CMOS technology;Frequenz;2022-10-28
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