6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates

Author:

Liu WenjianORCID,Romanczyk Brian,Guidry MatthewORCID,Hatui Nirupam,Wurm Christian,Li WeiyiORCID,Shrestha PawanaORCID,Zheng Xun,Keller Stacia,Mishra Umesh K.ORCID

Funder

Office of Naval Research

Defense Advanced Research Projects Agency

UCSB HFM Lab supported by ONR (Dr. Paul Maki) and ARO (Dr. James Harvey) DoD DURIP Grants

UCSB Nanofabrication Facility, an Open Access Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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