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A 3.1-dBm E-Band Truly Balanced Frequency Quadrupler in 22-nm FDSOI CMOS

  • Published:2020-12 Issue:12 Volume:30 Page:1165-1168
  • ISSN:1531-1309
  • Container-title:IEEE Microwave and Wireless Components Letters
  • language:
  • Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Vehring SoenkeORCID,Ding Yaoshun,Scholz PhilippORCID,Gerfers FriedelORCID

Funder

Globalfoundries through the RF/mmWave University Program

German Research Foundation (DFG) in the project “DataRace” of Priority Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A F-Band X4 Frequency Multiplier Chip with High Spectral Purity Using Vertically Stacked Marchand Baluns and TF-MSL;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A W-Band Stacked Frequency Quadrupler With a Dual-Driven Core Achieving 10.3% Drain Efficiency;IEEE Microwave and Wireless Technology Letters;2024-06

3. Highly Efficient Differential Frequency Doubler With Output Resistance Boosting Feedback;IEEE Journal of Solid-State Circuits;2024-02

4. A X4 Multiplier MMIC to E-Band Frequencies with High Spectral Purity in 50 nm mHEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. A 4.4mW Inductorless 2–20 GHz Single-Ended to Differential Frequency Doubler in 45 nm RFSOI CMOS Technology;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11
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