Boron-doped emitters for high-performance vertical pnp transistors
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx2/847/2445/00069488.pdf?arnumber=69488
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An Investigation of Process Variations and Mismatch Characteristics of Vertical Bipolar Junction Transistors;IEEE Access;2023
2. An Investigation of the Inconsistency in Barrier Heights for PNP and NPN Polysilicon Emitter Bipolar Transistors Using a New Tunneling Model;Japanese Journal of Applied Physics;1994-03-15
3. The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistors;IEEE Electron Device Letters;1992-08
4. The design and optimization of high-performance, double-poly self-aligned p-n-p technology;IEEE Transactions on Electron Devices;1991-06
5. Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions;IEEE Transactions on Electron Devices;1991
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