Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO/sub 2//TiN gate stack-Reference-Cited by-同舟云学术

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Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO/sub 2//TiN gate stack

Published:2006-03 Issue:3 Volume:53 Page:449-456
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Weber O.,Damlencourt J.-F.,Andrieu F.,Ducroquet F.,Ernst T.,Hartmann J.-M.,Papon A.-M.,Renault O.,Guillaumot B.,Deleonibus S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/33601/01597520.pdf?arnumber=1597520

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si_0.8Ge_0.2 Through HfO₂ Dielectric Direct Deposition;IEEE Electron Device Letters;2022-10

2. Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer;Journal of Physics D: Applied Physics;2021-07-30

3. Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process;IEEE Transactions on Electron Devices;2021-06

4. Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs;IEEE Transactions on Electron Devices;2020-12

5. Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature;Applied Physics Express;2020-11-01

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