Physics-based modeling of FinFET RF variability-Reference-Cited by-同舟云学术

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Physics-based modeling of FinFET RF variability

Published:2016-10 Issue: Volume: Page:
ISSN:
Container-title:2016 11th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Bughio A. M.,Guerrieri S. Donati,Bonani F.,Ghione G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7764428/7777458/07777534.pdf?arnumber=7777534

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling;IEEE EUROCON 2023 - 20th International Conference on Smart Technologies;2023-07-06

2. Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations;IEEE EUROCON 2023 - 20th International Conference on Smart Technologies;2023-07-06

3. Multi-bias Thermal X-Parameter Model for Efficient Physics-Based FinFET Simulation in RF CAD Tools;Proceedings of SIE 2022;2023

4. Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations;2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC);2022-04-07

5. Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches;Electronics;2022-03-09

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