Enhanced Limit-of-Detection of Current Sensor Based on Tunneling Magnetoresistive Effect With Multichips Differential Design-Reference-Cited by-同舟云学术

Enhanced Limit-of-Detection of Current Sensor Based on Tunneling Magnetoresistive Effect With Multichips Differential Design

Published:2023 Issue: Volume:72 Page:1-9
ISSN:0018-9456
Container-title:IEEE Transactions on Instrumentation and Measurement
language:
Short-container-title:IEEE Trans. Instrum. Meas.

Author:

Liu Jiaming¹^ORCID,Guan Mengmeng¹^ORCID,Xu Yiwei¹^ORCID,Zhao Shuang¹^ORCID,Su Wei¹^ORCID,Zhang Cuiling²^ORCID,Wang Zhiguang¹^ORCID,Zhang Xiaohui²^ORCID,Hu Zhongqiang¹^ORCID,Jiang Zhuangde²^ORCID,Liu Ming¹^ORCID

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, China

2. International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University, Xi’an, China

Funder

National Key Research and Development Program of China

Natural Science Foundation of China

Key Research and Development Program of Shaanxi Province

National 111 Project of China

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/19/10012124/10287261.pdf?arnumber=10287261

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