A Novel IGBT Junction Temperature Detection Based on High-Frequency Model of Inductor Element-Reference-Cited by-同舟云学术

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A Novel IGBT Junction Temperature Detection Based on High-Frequency Model of Inductor Element

Published:2023 Issue: Volume:72 Page:1-10
ISSN:0018-9456
Container-title:IEEE Transactions on Instrumentation and Measurement
language:
Short-container-title:IEEE Trans. Instrum. Meas.

Author:

Xu Guoqing¹^ORCID,Shao Lingfeng¹^ORCID,Feng Wei²^ORCID,Zhu Wei¹^ORCID,Pan Zhengyun³,Li Changle²^ORCID,Zhang Yanhui²^ORCID,Xia Lei¹^ORCID

Affiliation:

1. School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China

2. Shenzhen Institute of Advanced Studies, Chinese Academy of Sciences, Shenzhen, China

3. Hefei Design and Research Institute of Coal Industry Co., Ltd, Hefei, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/19/10012124/10024344.pdf?arnumber=10024344

Reference42 articles.

1. Analysis on the Characteristics of Dynamic Changes in Junction Temperature of Power Semiconductor Devices

2. In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives

3. The influence of temperature on BSIT’s turn-off time;yanfeng;Proc 5th Int Conf Solid-State Integr Circuit Technol,1998

4. On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters;kuhn;Proc 13th Eur Conf Power Electron Appl,2009

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