Temperature-Dependent RF Characteristics of Al₂O₃-Passivated WSe₂ MOSFETs
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Published:2020-07
Issue:7
Volume:41
Page:1134-1137
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Xiong KuanchenORCID,
Zhang XiaotianORCID,
Li LeiORCID,
Zhang Fu,
Davis BenjaminORCID,
Madjar AsherORCID,
Goritz Alexander,
Wietstruck MatthiasORCID,
Kaynak Mehmet,
Strandwitz Nicholas C.,
Terrones Mauricio,
Redwing Joan M.,
Hwang James C. M.ORCID
Funder
National Science Foundation (NSF) EFRI 2-DARE
NSF Cooperative Agreement
NSF
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials