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SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation

  • Published:2021-01 Issue:1 Volume:42 Page:74-77
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Wen JiaxuanORCID,Chaganti V. R. Saran KumarORCID,Truttmann Tristan K.ORCID,Liu Fengdeng,Jalan Bharat,Koester Steven J.ORCID

Funder

Air Force Office of Scientific Research

National Science Foundation (NSF) through the University of Minnesota MRSEC

NSF

NSF through the National Nanotechnology Coordinated Infrastructure

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and properties of wide-bandgap semiconductor La-doped SrSnO3 film under strain conditions;Journal of Materials Science: Materials in Electronics;2024-05

2. Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications;Multiscale and Multidisciplinary Modeling, Experiments and Design;2024-04-06

3. Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3;Advanced Electronic Materials;2023-10-15

4. Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO3;ACS Nano;2023-08-28

5. Evaluating the thermal performance of perovskite SrSnO3 field effect transistors;2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm);2023-05-30
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