A 25-to-40 GHz Asymmetric Single-Pole Double-Throw Switch Using Triple-Well CMOS Device-Reference-Cited by-同舟云学术

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A 25-to-40 GHz Asymmetric Single-Pole Double-Throw Switch Using Triple-Well CMOS Device

Published:2021-11-24 Issue: Volume: Page:
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Container-title:2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
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Author:

Li Ling,Xie Kenan,Zhou Tongxuan,Dong Haitang,Zhang Hao,Wang Keping

Funder

Natural Science Foundation of Jiangsu Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9661584/9661598/09661715.pdf?arnumber=9661715

Reference6 articles.

1. Low-loss and Small-size 28 GHz CMOS SPDT Switches using Switched Inductor

2. A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE

3. A K-Band Low-Loss High-Isolation CMOS SPDT Switch Based on Multi-Tap Inductor Technique

4. A $Ka$ -Band GaAs MMIC Traveling-Wave Switch With Absorptive Characteristic

5. A Low-Loss 50–70 GHz SPDT Switch in 90 nm CMOS

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ka Band Based-on GaAs Asymmeteric Single-Pole Double-Throw Switch;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

2. A 2.5GHz Switched-Capacitor Power Amplifier with High Efficiency for BLE in 55nm CMOS Process;2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2022-08-12

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