Silicon carbide power MOSFET model and parameter extraction sequence-Reference-Cited by-同舟云学术

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Silicon carbide power MOSFET model and parameter extraction sequence

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Container-title:IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03.
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Author:

McNutt T.,Hefner A.,Mantooth A.,Berning D.,Sei-Hyung Ryu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8633/27386/01218298.pdf?arnumber=1218298

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs;IEEE Transactions on Nuclear Science;2024-07

2. Reliability and Condition Monitoring of Sic Power MOSFETs;SSRN Electronic Journal;2024

3. Model-Based Adaptive Dead Time Optimization for Series Resonant DC-DC Converter Using SiC MOSFETs;IECON 2023- 49th Annual Conference of the IEEE Industrial Electronics Society;2023-10-16

4. Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-ON Switching Transients Modeling of High-Voltage SiC MOSFETs;IEEE Transactions on Power Electronics;2023-05

5. Universal Smart Power Module (USPM) for Carbon Neutral Society;2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia);2022-05-15

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