Robust ESD Capability of High-voltage nLDMOSs with Embedded Floating P+ Structures in the Drain Side
Author:
Affiliation:
1. National United University,Department of Electronic Engineering,Miaoli City,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10179490/10179492/10179526.pdf?arnumber=10179526
Reference15 articles.
1. Study of Breakdown Voltage Improvement of High-Voltage NLDMOS in Width Direction
2. Experimental Results of Breakdown Voltage and Electrical Breakdown Time Delay of Geiger-Muller Chamber;pejovi?;57th International Scientific Conference on Information Communication and Energy Systems and Technologies (ICEST),2022
3. A Novel Punch through Breakdown Trench MOS with Self-Adjustable Resistor for Low Temperature Coefficient of Breakdown Voltage
4. Breakdown Characteristics of Ester Liquids under DC Voltage
5. Study on the Breakdown Characteristics of Metallized Film under AC/DC Superimposed Voltage
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