Design considerations of high-performance narrow-emitter bipolar transistors-Reference-Cited by-同舟云学术

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Design considerations of high-performance narrow-emitter bipolar transistors

Published:1987-04 Issue:4 Volume:8 Page:174-175
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tang D.D.,Tze-Chiang Chen ,Ching-Te Chuang ,Li G.P.,Stork J.M.C.,Ketchen M.B.,Hackbarth E.,Ning T.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31988/01487142.pdf?arnumber=1487142

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar Technology;VLSI Technology;2003-03-19

2. Optimization of a 0.6μm, single polysilicon emitter bipolar technology versus narrow emitter effects;Microelectronics Journal;2002-08

3. Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications;IEEE Transactions on Electron Devices;2002-03

4. Bipolar Junction Transistors;Semiconductor Device Physics and Simulation;1998

5. Sidewall effects on maximum cutoff frequency and forward transit time in downscaled bipolar transistors;Solid-State Electronics;1994-10

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