The Effect of Barrier Composition on the Vertical Carrier Transport and Lasing Properties of 1.55-<tex>$mu hbox m$</tex>Multiple Quantum-Well Structures-Reference-Cited by-同舟云学术

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The Effect of Barrier Composition on the Vertical Carrier Transport and Lasing Properties of 1.55-$mu hbox m$Multiple Quantum-Well Structures

Published:2006-07 Issue:7 Volume:42 Page:713-724
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:en
Short-container-title:IEEE J. Quantum Electron.

Author:

Akram M.N.,Kjebon O.,Marcinkevicius S.,Schatz R.,Berggren J.,Olsson F.,Lourdudoss S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/3/34323/01644885.pdf?arnumber=1644885

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy;IEEE Transactions on Electron Devices;2017-07

2. Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors;IEEE Journal of Quantum Electronics;2017-06

3. Comparison of Electron and Hole Mobilities in Multiple-Quantum-Well Solar Cells Using a Time-of-Flight Technique;IEEE Journal of Photovoltaics;2015-11

4. Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Multiple Quantum Well Solar Cells;IEEE Journal of Photovoltaics;2014-11

5. Experimental characterization of high-speed 155 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers;Journal of the Optical Society of America B;2009-01-27

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